V7NM153-M3/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: 7A, 150V, DFN3820A TRENCH SKY RE
Packaging: Bulk
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
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Технічний опис V7NM153-M3/H Vishay General Semiconductor - Diodes Division
Description: 7A, 150V, DFN3820A TRENCH SKY RE, Packaging: Bulk, Package / Case: 2-VDFN, Mounting Type: Surface Mount, Wettable Flank, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 390pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DFN3820A, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A, Current - Reverse Leakage @ Vr: 70 µA @ 150 V, Qualification: AEC-Q101.