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VEC2616-TL-H-Z

VEC2616-TL-H-Z onsemi


VEC2616.pdf Виробник: onsemi
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: SOT-28FL/VEC8
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Технічний опис VEC2616-TL-H-Z onsemi

Description: MOSFET N/P-CH 60V 3A/2.5A SOT28, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V, Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Supplier Device Package: SOT-28FL/VEC8.