Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > VI60100C-E3/P
VI60100C-E3/P

VI60100C-E3/P Vishay General Semiconductor - Diodes Division

v60100c.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO262-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-262-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис VI60100C-E3/P Vishay General Semiconductor - Diodes Division

Description: DIODE ARR SCHOT 100V 30A TO262-3, Current - Reverse Leakage @ Vr: 1 mA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-262-3, Current - Average Rectified (Io) (per Diode): 30A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Packaging: Tube.