VS-10ETF04FP-M3

VS-10ETF04FP-M3 Vishay General Semiconductor - Diodes Division


vs-10etf02_04_06fp-m3.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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Технічний опис VS-10ETF04FP-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE GP 400V 10A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.

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VS-10ETF04FP-M3 Виробник : Vishay Semiconductors vs-10etf02_04_06fp-m3.pdf Schottky Diodes & Rectifiers New Input Diodes - FULLPAK-220-e3
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VS-10ETF04FP-M3 Виробник : VISHAY vs-10etf02_04_06fp-m3.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 160A; TO220FP-2; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: TO220FP-2
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
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