Технічний опис VS-10ETF12STRLPBF Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 10A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 310 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції VS-10ETF12STRLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VS-10ETF12STRLPBF | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.2KV 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |