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Технічний опис VS-20ETS08STRLPBF Vishay Semiconductors
Description: DIODE GEN PURP 800V 20A TO263AB, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 100 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 20A, Technology: Standard.
Інші пропозиції VS-20ETS08STRLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
VS-20ETS08STRLPBF | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO263ABSpeed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 20A Technology: Standard |
товару немає в наявності |

