VS-8ETH03-1-M3 Vishay Semiconductors
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.47 грн |
| 10+ | 86.09 грн |
| 100+ | 60.18 грн |
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Технічний опис VS-8ETH03-1-M3 Vishay Semiconductors
Description: DIODE STANDARD 300V 8A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 300 V.
Інші пропозиції VS-8ETH03-1-M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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VS-8ETH03-1-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 300V 8A TO262AAPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Current - Reverse Leakage @ Vr: 20 µA @ 300 V |
товару немає в наявності |
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| VS-8ETH03-1-M3 | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 8A; tube; Ifsm: 100A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Kind of package: tube Max. forward voltage: 1.25V Reverse recovery time: 35ns Max. forward impulse current: 100A |
товару немає в наявності |