Технічний опис VS-8EWF06STRLPBF Vishay
Description: DIODE GEN PURP 600V 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 55 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: D-PAK (TO-252AA), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.
Інші пропозиції VS-8EWF06STRLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VS-8EWF06STRLPBF | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 8A D-PAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |