VS-8S2TH06I-M Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Технічний опис VS-8S2TH06I-M Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 16 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.