VS-CPV364M4UPBF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 20A 63W IMS-2
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 63 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Supplier Device Package: IMS-2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Operating Temperature: -40°C ~ 150°C (TJ)
Input: Standard
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
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Технічний опис VS-CPV364M4UPBF Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 20A 63W IMS-2, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 63 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 20 A, Part Status: Obsolete, Supplier Device Package: IMS-2, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Operating Temperature: -40°C ~ 150°C (TJ), Input: Standard, Mounting Type: Through Hole, Package / Case: 19-SIP (13 Leads), IMS-2.
Інші пропозиції VS-CPV364M4UPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VS-CPV364M4UPBF | Виробник : Vishay Semiconductors | IGBT Transistors 600 Volt 10 Amp |
товару немає в наявності |