VS-GA100NA60UP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 100A 250W SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
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Технічний опис VS-GA100NA60UP Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 100A 250W SOT227, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 7.4 nF @ 30 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 250 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Part Status: Obsolete, Supplier Device Package: SOT-227, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A.


