VS-GB15XP120KTPBF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: IGBT MODULE 1200V 30A 187W MTP
Packaging: Bulk
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: MTP
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 187 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
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Технічний опис VS-GB15XP120KTPBF Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 30A 187W MTP, Packaging: Bulk, Package / Case: 12-MTP Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: MTP, IGBT Type: NPT, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 187 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V.