VS-GB200TH120U Vishay General Semiconductor - Diodes Division

Description: IGBT MODULE 1200V 330A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 330 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1316 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V.