VS-GB70LA60UF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 111A 447W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 447 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 111 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
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Технічний опис VS-GB70LA60UF Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 111A 447W SOT-227, Current - Collector Cutoff (Max): 100 µA, Power - Max: 447 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 111 A, IGBT Type: NPT, Supplier Device Package: SOT-227, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.


