VS-GB70LA60UF Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: IGBT MOD 600V 111A 447W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 447 W
Current - Collector Cutoff (Max): 100 µA
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Технічний опис VS-GB70LA60UF Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 111A 447W SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: NPT, Current - Collector (Ic) (Max): 111 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 447 W, Current - Collector Cutoff (Max): 100 µA.