VS-GT100TP120N Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: IGBT MOD 1200V 180A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
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Технічний опис VS-GT100TP120N Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 180A INT-A-PAK, Packaging: Bulk, Package / Case: INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: INT-A-PAK, IGBT Type: Trench, Current - Collector (Ic) (Max): 180 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 652 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V.