Технічний опис VS-MBRB1045PBF Vishay Semiconductors
Description: DIODE SCHOTTKY 45V 10A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 45 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A, Voltage - DC Reverse (Vr) (Max): 45 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 600pF @ 5V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції VS-MBRB1045PBF
| Фото | Назва | Виробник | Інформація |
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VS-MBRB1045PBF | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 45V 10A TO263ABCurrent - Reverse Leakage @ Vr: 100 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 600pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |