VSKHF200-12HJ Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: SCR MODULE 1.2KV 444A 3-MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 444 A
Voltage - Off State: 1.2 kV
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Технічний опис VSKHF200-12HJ Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.2KV 444A 3-MAGNAPAK, Packaging: Bulk, Package / Case: 3-MAGN-A-PAK™, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 125°C (TJ), Structure: Series Connection - SCR/Diode, Current - Hold (Ih) (Max): 600 mA, Current - Gate Trigger (Igt) (Max): 200 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A, Number of SCRs, Diodes: 1 SCR, 1 Diode, Current - On State (It (AV)) (Max): 200 A, Voltage - Gate Trigger (Vgt) (Max): 3 V, Current - On State (It (RMS)) (Max): 444 A, Voltage - Off State: 1.2 kV.