Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > VSS8D3M15-M3/I
VSS8D3M15-M3/I

VSS8D3M15-M3/I Vishay General Semiconductor - Diodes Division

vss8d3m15.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.9A SLIMSMAW
Current - Reverse Leakage @ Vr: 180 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 1.9A
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 14000 шт
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Технічний опис VSS8D3M15-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTK 150V 1.9A SLIMSMAW, Current - Reverse Leakage @ Vr: 180 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: SlimSMAW (DO-221AD), Current - Average Rectified (Io): 1.9A, Capacitance @ Vr, F: 190pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-221AC, SMA Flat Leads, Packaging: Tape & Reel (TR).