VX20202CHM3/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис VX20202CHM3/P Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO220AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 50 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.