VX60100C-M3/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220AB
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.39 грн |
| 10+ | 105.99 грн |
| 100+ | 84.38 грн |
| 500+ | 67.01 грн |
| 1000+ | 56.85 грн |
| 2000+ | 54.01 грн |
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Технічний опис VX60100C-M3/P Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220AB, Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io) (per Diode): 30A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 700 µA @ 100 V.