VX60100C-M3/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE ARR SCHOT 100V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 136.55 грн |
| 10+ | 109.32 грн |
| 100+ | 87.03 грн |
| 500+ | 69.11 грн |
| 1000+ | 58.64 грн |
| 2000+ | 55.71 грн |
Відгуки про товар
Написати відгук
Технічний опис VX60100C-M3/P Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A, Current - Reverse Leakage @ Vr: 700 µA @ 100 V, Qualification: AEC-Q101.