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WI62195 Wise-Integration

WI62195_Datasheet_Rev_1.0.pdf
Виробник: Wise-Integration
Description: GANFET 2P-CH 750V 9A 14QFN
Packaging: Tray
Package / Case: 14-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V
FET Feature: GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id: 1.75V @ 10mA
Supplier Device Package: 14-PQFN (6x8)
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Технічний опис WI62195 Wise-Integration

Description: GANFET 2P-CH 750V 9A 14QFN, Packaging: Tray, Package / Case: 14-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 750V, Current - Continuous Drain (Id) @ 25°C: 9A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V, Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V, Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V, FET Feature: GaNFET (Gallium Nitride), Vgs(th) (Max) @ Id: 1.75V @ 10mA, Supplier Device Package: 14-PQFN (6x8).