WM01P60M WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1465 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 34.62 грн |
| 37+ | 10.66 грн |
| 89+ | 4.45 грн |
| 100+ | 4.02 грн |
| 277+ | 3.32 грн |
| 760+ | 3.14 грн |
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Технічний опис WM01P60M WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -20A; 1.8W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -12V, Drain current: -6A, Pulsed drain current: -20A, Power dissipation: 1.8W, Case: SOT23, Gate-source voltage: ±8V, On-state resistance: 28mΩ, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Kind of channel: enhancement.