WM02DN085C WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 25+ | 16.79 грн |
| 30+ | 13.96 грн |
| 100+ | 13.21 грн |
| 500+ | 11.63 грн |
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Технічний опис WM02DN085C WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, Drain current: 8.5A, Pulsed drain current: 56A, On-state resistance: 10.9mΩ, Gate charge: 22.1nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement, Semiconductor structure: common drain.