WM02DN08T WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.06 грн |
| 52+ | 8.14 грн |
| 86+ | 4.89 грн |
| 100+ | 4.38 грн |
| 500+ | 3.86 грн |
Відгуки про товар
Написати відгук
Технічний опис WM02DN08T WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 0.27W, Case: SOT563, Mounting: SMD, Kind of package: reel; tape, Drain current: 0.8A, Pulsed drain current: 3A, On-state resistance: 0.25Ω, Gate charge: 1.1nC, Gate-source voltage: ±10V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement.