WM02DN095C WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 9.5A
Pulsed drain current: 60A
On-state resistance: 9.4mΩ
Gate charge: 22nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.53 грн |
| 21+ | 20.61 грн |
| 25+ | 17.20 грн |
| 100+ | 16.29 грн |
| 500+ | 14.29 грн |
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Технічний опис WM02DN095C WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, Drain current: 9.5A, Pulsed drain current: 60A, On-state resistance: 9.4mΩ, Gate charge: 22nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement, Semiconductor structure: common drain.