WM02DN110C WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Drain current: 11A
Pulsed drain current: 70A
Gate charge: 23nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
| Кількість | Ціна |
|---|---|
| 14+ | 34.26 грн |
| 24+ | 18.16 грн |
| 29+ | 14.90 грн |
| 100+ | 13.23 грн |
| 500+ | 12.22 грн |
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Технічний опис WM02DN110C WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.56W, Case: DFN2030-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 7.5mΩ, Drain current: 11A, Pulsed drain current: 70A, Gate charge: 23nC, Gate-source voltage: ±12V, Version: ESD, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain.