WM02DN50M3 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 27mΩ
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 5A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 27mΩ
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 5A
на замовлення 2797 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 22.28 грн |
| 56+ | 6.90 грн |
| 133+ | 2.88 грн |
| 148+ | 2.60 грн |
| 426+ | 2.12 грн |
| 1172+ | 2.00 грн |
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Технічний опис WM02DN50M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: common drain, On-state resistance: 27mΩ, Gate charge: 11nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 20A, Drain-source voltage: 20V, Drain current: 5A.