WM02DN50M3 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Drain current: 5A
Pulsed drain current: 20A
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
| Кількість | Ціна |
|---|---|
| 19+ | 24.34 грн |
| 57+ | 7.45 грн |
| 133+ | 3.15 грн |
| 148+ | 2.83 грн |
| 500+ | 2.50 грн |
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Технічний опис WM02DN50M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 27mΩ, Drain current: 5A, Pulsed drain current: 20A, Gate charge: 11nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain.