WM02DN50M3 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2785 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 21.96 грн |
| 58+ | 6.82 грн |
| 138+ | 2.85 грн |
| 152+ | 2.58 грн |
| 426+ | 2.16 грн |
| 1172+ | 2.05 грн |
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Технічний опис WM02DN50M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 5A, Pulsed drain current: 20A, Power dissipation: 1.5W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 27mΩ, Mounting: SMD, Gate charge: 11nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain.