WM02DN560Q WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.45 грн |
| 14+ | 29.78 грн |
| 25+ | 26.80 грн |
| 100+ | 23.74 грн |
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Технічний опис WM02DN560Q WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 56A, Pulsed drain current: 100A, Power dissipation: 31W, Case: DFN3030-8, Gate-source voltage: ±12V, On-state resistance: 5.4mΩ, Mounting: SMD, Gate charge: 27.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain, Version: ESD.