WM02DN560Q WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 56A
Pulsed drain current: 100A
On-state resistance: 5.4mΩ
Gate charge: 27.8nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.59 грн |
| 14+ | 30.16 грн |
| 25+ | 27.09 грн |
| 100+ | 24.01 грн |
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Технічний опис WM02DN560Q WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 31W, Case: DFN3030-8, Mounting: SMD, Kind of package: reel; tape, Drain current: 56A, Pulsed drain current: 100A, On-state resistance: 5.4mΩ, Gate charge: 27.8nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement, Semiconductor structure: common drain.