WM02DN60M3 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 20mΩ
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 20mΩ
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 6A
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 26.41 грн |
| 44+ | 8.89 грн |
| 73+ | 5.30 грн |
| 100+ | 4.76 грн |
| 232+ | 3.87 грн |
| 637+ | 3.66 грн |
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Технічний опис WM02DN60M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: common drain, On-state resistance: 20mΩ, Gate charge: 12nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 25A, Drain-source voltage: 20V, Drain current: 6A.