WM02DN60M3 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 26.24 грн |
| 45+ | 8.80 грн |
| 75+ | 5.28 грн |
| 100+ | 4.74 грн |
| 232+ | 3.99 грн |
| 637+ | 3.77 грн |
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Технічний опис WM02DN60M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 6A, Pulsed drain current: 25A, Power dissipation: 1.5W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: common drain.