
WM02DN60M3 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
15+ | 28.84 грн |
42+ | 9.45 грн |
70+ | 5.64 грн |
100+ | 5.06 грн |
232+ | 3.99 грн |
637+ | 3.76 грн |
Відгуки про товар
Написати відгук
Технічний опис WM02DN60M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.5W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 20mΩ, Drain current: 6A, Pulsed drain current: 25A, Gate charge: 12nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Kind of channel: enhancement, Semiconductor structure: common drain.