WM02DN70M3 WAYON
Виробник: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 32.23 грн |
| 38+ | 10.55 грн |
| 63+ | 6.33 грн |
| 100+ | 5.72 грн |
| 206+ | 4.50 грн |
| 565+ | 4.25 грн |
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Технічний опис WM02DN70M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.7W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 17mΩ, Drain current: 7A, Pulsed drain current: 28A, Gate charge: 9.6nC, Gate-source voltage: ±10V, Drain-source voltage: 20V, Version: ESD, Kind of channel: enhancement, Semiconductor structure: common drain.