
WM02DN70M3 WAYON

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 17mΩ
Version: ESD
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 7A
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
14+ | 30.54 грн |
39+ | 9.96 грн |
64+ | 6.01 грн |
100+ | 5.39 грн |
206+ | 4.39 грн |
565+ | 4.15 грн |
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Технічний опис WM02DN70M3 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.7W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: common drain, On-state resistance: 17mΩ, Version: ESD, Gate charge: 9.6nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: 28A, Drain-source voltage: 20V, Drain current: 7A.