WM02DP06T WAYON
Виробник: WAYONCategory: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 22.86 грн |
| 55+ | 7.23 грн |
| 90+ | 4.37 грн |
| 100+ | 3.93 грн |
| 280+ | 3.32 грн |
| 768+ | 3.14 грн |
| 3000+ | 3.12 грн |
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Технічний опис WM02DP06T WAYON
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -2.64A, Power dissipation: 0.15W, Case: SOT563, Gate-source voltage: ±12V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.