WM02N08G WAYON
Виробник: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 24.49 грн |
| 40+ | 9.88 грн |
| 87+ | 4.52 грн |
| 207+ | 1.90 грн |
| 500+ | 1.71 грн |
| 638+ | 1.44 грн |
| 1755+ | 1.36 грн |
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Технічний опис WM02N08G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 200mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.75A, Pulsed drain current: 3A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 0.45Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.