WM02N20G WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 21.96 грн |
| 59+ | 6.74 грн |
| 135+ | 2.92 грн |
| 193+ | 2.04 грн |
| 500+ | 1.83 грн |
| 596+ | 1.54 грн |
| 1640+ | 1.46 грн |
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Технічний опис WM02N20G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 0.35W, Case: SOT323, Gate-source voltage: ±10V, On-state resistance: 55mΩ, Mounting: SMD, Gate charge: 2.6nC, Kind of package: reel; tape, Kind of channel: enhancement.