WM02N31M WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.32 грн |
| 59+ | 6.86 грн |
| 135+ | 2.97 грн |
| 193+ | 2.07 грн |
| 500+ | 1.87 грн |
| 596+ | 1.58 грн |
| 1640+ | 1.49 грн |
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Технічний опис WM02N31M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 3.1A, Pulsed drain current: 12.4A, Power dissipation: 1W, Case: SOT23, Gate-source voltage: ±8V, On-state resistance: 45mΩ, Mounting: SMD, Gate charge: 3.7nC, Kind of package: reel; tape, Kind of channel: enhancement.