WM02N50M WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 5A
на замовлення 2963 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 25.33 грн |
| 49+ | 8.16 грн |
| 112+ | 3.51 грн |
| 160+ | 2.45 грн |
| 497+ | 1.86 грн |
| 1366+ | 1.76 грн |
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Технічний опис WM02N50M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 1.25W, Case: SOT23, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 21mΩ, Gate charge: 9.6nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 28A, Drain-source voltage: 20V, Drain current: 5A.