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WM02P06F WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2A5A688DB60D6&compId=WM02P06F.pdf?ci_sign=ad8804d2f8ab25b99a2276db98caabfcbb5434b7 Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.6A
Power dissipation: 0.3W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Технічний опис WM02P06F WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -2.6A, Power dissipation: 0.3W, Case: DFN1006-3, Gate-source voltage: ±10V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.