
WM02P14G WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
18+ | 23.65 грн |
55+ | 7.21 грн |
127+ | 3.11 грн |
181+ | 2.17 грн |
500+ | 1.96 грн |
559+ | 1.65 грн |
1537+ | 1.57 грн |
3000+ | 1.56 грн |
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Технічний опис WM02P14G WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -1.4A, Pulsed drain current: -5.6A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 70mΩ, Mounting: SMD, Gate charge: 4.9nC, Kind of package: reel; tape, Kind of channel: enhancement.