WM02P160R WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
On-state resistance: 17mΩ
Mounting: SMD
Pulsed drain current: -64A
Power dissipation: 6.5W
Gate charge: 28nC
Polarisation: unipolar
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: DFN2020-6
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.42 грн |
| 34+ | 12.41 грн |
| 42+ | 9.93 грн |
| 100+ | 9.35 грн |
| 500+ | 8.27 грн |
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Технічний опис WM02P160R WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W, On-state resistance: 17mΩ, Mounting: SMD, Pulsed drain current: -64A, Power dissipation: 6.5W, Gate charge: 28nC, Polarisation: unipolar, Drain current: -16A, Kind of channel: enhancement, Drain-source voltage: -20V, Type of transistor: P-MOSFET, Gate-source voltage: ±10V, Kind of package: reel; tape, Case: DFN2020-6.