WM02P20G WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 25.40 грн |
| 49+ | 8.17 грн |
| 112+ | 3.52 грн |
| 160+ | 2.46 грн |
| 493+ | 1.89 грн |
| 1353+ | 1.78 грн |
| 3000+ | 1.76 грн |
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Технічний опис WM02P20G WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2A, Pulsed drain current: -8A, Power dissipation: 0.25W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 65mΩ, Mounting: SMD, Gate charge: 6.23nC, Kind of package: reel; tape, Kind of channel: enhancement.