WM02P23M WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 24.49 грн |
| 47+ | 8.47 грн |
| 102+ | 3.86 грн |
| 243+ | 1.62 грн |
| 500+ | 1.46 грн |
| 746+ | 1.23 грн |
| 2051+ | 1.17 грн |
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Технічний опис WM02P23M WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2.3A, Pulsed drain current: -9.2A, Power dissipation: 0.7W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 0.115Ω, Mounting: SMD, Gate charge: 3.2nC, Kind of package: reel; tape, Kind of channel: enhancement.