WM02P26M WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 870 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 28.32 грн |
| 41+ | 9.88 грн |
| 89+ | 4.53 грн |
| 211+ | 1.89 грн |
| 500+ | 1.71 грн |
| 688+ | 1.36 грн |
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Технічний опис WM02P26M WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2.6A, Pulsed drain current: -10A, Power dissipation: 1W, Case: SOT23, Gate-source voltage: ±8V, On-state resistance: 65mΩ, Mounting: SMD, Gate charge: 4.9nC, Kind of package: reel; tape, Kind of channel: enhancement.