WM02P56M3 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 23.70 грн |
| 53+ | 7.55 грн |
| 87+ | 4.53 грн |
| 100+ | 4.09 грн |
| 271+ | 3.41 грн |
| 745+ | 3.23 грн |
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Технічний опис WM02P56M3 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -5.6A, Pulsed drain current: -22.4A, Power dissipation: 2W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 14.2nC, Kind of package: reel; tape, Kind of channel: enhancement.