WM02P60M2 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 16+ | 29.75 грн |
| 44+ | 9.54 грн |
| 74+ | 5.69 грн |
| 100+ | 5.11 грн |
| 500+ | 4.52 грн |
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Технічний опис WM02P60M2 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Pulsed drain current: -18A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.