WM03DN06D WAYON
Виробник: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 24.73 грн |
| 53+ | 7.87 грн |
| 125+ | 3.28 грн |
| 140+ | 2.94 грн |
| 500+ | 2.59 грн |
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Технічний опис WM03DN06D WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.6A, Pulsed drain current: 1.8A, Power dissipation: 0.3W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 450pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.