
WM03N06M WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2340 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
16+ | 27.93 грн |
36+ | 11.16 грн |
106+ | 3.74 грн |
252+ | 1.56 грн |
500+ | 1.41 грн |
812+ | 1.14 грн |
2234+ | 1.08 грн |
Відгуки про товар
Написати відгук
Технічний опис WM03N06M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.6A, Pulsed drain current: 2.4A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 0.75nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.