WM03P56M2 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2780 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 21.11 грн |
| 59+ | 6.74 грн |
| 97+ | 4.08 грн |
| 108+ | 3.65 грн |
| 298+ | 3.10 грн |
| 820+ | 2.92 грн |
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Технічний опис WM03P56M2 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -5.6A, Pulsed drain current: -22.4A, Power dissipation: 2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 28mΩ, Mounting: SMD, Gate charge: 28.7nC, Kind of package: reel; tape, Kind of channel: enhancement.