WM05N02G WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 24.55 грн |
| 40+ | 9.98 грн |
| 87+ | 4.53 грн |
| 207+ | 1.90 грн |
| 500+ | 1.71 грн |
| 638+ | 1.45 грн |
| 1755+ | 1.37 грн |
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Технічний опис WM05N02G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.22A, Pulsed drain current: 0.88A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 2.1Ω, Mounting: SMD, Gate charge: 1.5nC, Kind of package: reel; tape, Kind of channel: enhancement.