
WM05N02M WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
16+ | 27.09 грн |
36+ | 11.00 грн |
107+ | 3.68 грн |
256+ | 1.54 грн |
500+ | 1.39 грн |
812+ | 1.13 грн |
2234+ | 1.07 грн |
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Технічний опис WM05N02M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.2A, Power dissipation: 0.3W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 1.5nC, Pulsed drain current: 1A.