WM05P01G WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 27.02 грн |
| 43+ | 9.25 грн |
| 94+ | 4.20 грн |
| 223+ | 1.76 грн |
| 500+ | 1.59 грн |
| 688+ | 1.34 грн |
| 1890+ | 1.27 грн |
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Технічний опис WM05P01G WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -0.13A, Pulsed drain current: -0.52A, Power dissipation: 0.225W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 3.5Ω, Mounting: SMD, Gate charge: 0.65nC, Kind of package: reel; tape, Kind of channel: enhancement.