WM05P02F WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD, Case: DFN1006-3, Power dissipation: 0.35W, Gate charge: 2.1nC, Polarisation: unipolar, Version: ESD, Drain current: -0.25A, Kind of channel: enhancement, Drain-source voltage: -50V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 3.2Ω, Mounting: SMD, Pulsed drain current: -1A.